End-point Detection

IB technology proprietary end-point detection is based on Dedicated Back Scattered Electron Detector (BSED)

Different BSED setups enable distinctive nanometer resolution imaging of either the very top surface (setup 1) or under-layer (setup 2)

Expected contrast in the BSED modes is proven by first-principles Monte Carlo simulations

Example of BSE Contrast Simulations

img-28Silicon Oxide structure with embedded 100 nm copper metal lines buried under 5 nm thick gold layer