End-point Detection
IB technology proprietary end-point detection is based on Dedicated Back Scattered Electron Detector (BSED)
Different BSED setups enable distinctive nanometer resolution imaging of either the very top surface (setup 1) or under-layer (setup 2)
Expected contrast in the BSED modes is proven by first-principles Monte Carlo simulations
Example of BSE Contrast Simulations
Silicon Oxide structure with embedded 100 nm copper metal lines buried under 5 nm thick gold layer
